DE60001632T2

3G

Title

Not Available

Application Number:

DE2000601632T

Publication Date:

04-12-2003

Current Assignee:

KONINKLIJKE PHILIPS NV

Family ID:

10865219

Application Date:

10-11-2000

Declaring Company:

Publication Country:

US

Priority Date:

27-11-1999

View on Espacenet goto-link

Title

Not Available

Application Number:

DE2000601632T

Family ID:

10865219

Publication Country:

US

Publication Date:

04-12-2003

Application Date:

10-11-2000

Priority Date:

27-11-1999

Current Assignee:

KONINKLIJKE PHILIPS NV

Declaring Company:

View on Espacenet goto-link

Abstract  Abstract

Provided is a method for fabricating a p-type gallium nitride-based semiconductor capable of providing a gallium nitride-based semiconductor containing a p-type dopant without activation annealing.  A GaN-based semiconductor region (17) containing the p-type dopant is formed above a support (13) in a growth furnace (10).  The GaN-based semiconductor layer (17) is grown on a GaN-based semiconductor layer (15) by supplying an organometallic material and ammonia to the growth furnace (10).  The GaN-based semiconductor is doped with the p-type dopant and magnesium is an example of the p-type dopant.  After the GaN-based semiconductor regions (15 17) are formed an atmosphere (19) containing at least either monomethylamine or monoethylamine is formed in the growth furnace (10).  After the atmosphere (19) is provided the substrate temperature is decreased from the growth temperature of the GaN-based semiconductor region (17).  When film formation is completed and the substrate temperature is decreased to close to a room temperature the fabrication of a p-type GaN-based semiconductor (17a) and an epitaxial wafer (E) is completed.

Provided is a method for fabricating a p-type gallium nitride-based semiconductor capable of providing a gallium nitride-based semiconductor containing a p-type dopant without activation annealing.  A GaN-based semiconductor region (17) containing the p-type dopant is formed above a support (13) in a growth furnace (10).  The GaN-based semiconductor layer (17) is grown on a GaN-based semiconductor layer (15) by supplying an organometallic material and ammonia to the growth furnace (10).  The GaN-based semiconductor is doped with the p-type dopant and magnesium is an example of the p-type dopant.  After the GaN-based semiconductor regions (15 17) are formed an atmosphere (19) containing at least either monomethylamine or monoethylamine is formed in the growth furnace (10).  After the atmosphere (19) is provided the substrate temperature is decreased from the growth temperature of the GaN-based semiconductor region (17).  When film formation is completed and the substrate temperature is decreased to close to a room temperature the fabrication of a p-type GaN-based semiconductor (17a) and an epitaxial wafer (E) is completed.

Note:

The information in blue was extracted from the third parties (Standard Setting Organisation, Espacenet)

The information in grey was provided by the patent holder

The information in purple was extracted from the FrandAvenue

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